INCHANGE manufacturer logo and representative part image Part number: IPB60R125C6 Manufacturer: INCHANGE File Size: 254.11kb Download: 📄 Datasheet Description: N-channel mosfet.
IPB60R125C6 - MOSFET (Infineon Technologies) MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Powe.
IPB60R125CP - Power Transistor (Infineon Technologies) CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qua.
IPB60R125CP - N-Channel MOSFET (INCHANGE) Isc N-Channel MOSFET Transistor IPB60R125CP ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB60R120P7 - N-Channel MOSFET (INCHANGE) Isc N-Channel MOSFET Transistor IPB60R120P7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB60R120P7 - MOSFET (Infineon) IPB60R120P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.
IPB60R160C6 - MOSFET (Infineon Technologies) MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.2 Final Powe.
IPB60R160C6 - N-Channel MOSFET (INCHANGE) Isc N-Channel MOSFET Transistor IPB60R160C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB60R160P6 - MOSFET (Infineon) MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Man.
IPB60R160P6 - N-Channel MOSFET (INCHANGE) Isc N-Channel MOSFET Transistor IPB60R160P6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB60R165CP - Power Transistor (Infineon Technologies) IPB60R165CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current cap.
