IPD60R170CFD7 - N-Channel MOSFET
IPD60R170CFD7 Features
* Static drain-source on-resistance: RDS(on)≤170mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
* ABSOLUTE MAXIMUM RATIN