IPD60R1K4C6 Datasheet, Transistor, Infineon Technologies

IPD60R1K4C6 Features

  • Transistor ,]    ! G 8I 8D )> .;? 6 ? @ <>

PDF File Details

Part number:

IPD60R1K4C6

Manufacturer:

Infineon ↗ Technologies

File Size:

1.30MB

Download:

📄 Datasheet

Description:

Power transistor.

Datasheet Preview: IPD60R1K4C6 📥 Download PDF (1.30MB)
Page 2 of IPD60R1K4C6 Page 3 of IPD60R1K4C6

TAGS

IPD60R1K4C6
Power
Transistor
Infineon Technologies

📁 Related Datasheet

IPD60R1K4C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanch.

IPD60R1K0CE - MOSFET (Infineon Technologies)
IPD60R1K0CE, IPU60R1K0CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD60R1K0CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche .

IPD60R1K5CE - MOSFET (Infineon Technologies)
IPD60R1K5CE, IPU60R1K5CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD60R1K5CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.5Ω ·Enhancement mode: ·100% avalanch.

IPD60R170CFD7 - MOSFET (Infineon)
IPD60R170CFD7 MOSFET 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD60R170CFD7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% ava.

IPD60R180C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPD60R180C7 Data Sheet Rev. 2.0 Final Power Man.

IPD60R180C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R180C7,IIPD60R180C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·Enhancement mode: ·100% avalanc.

IPD60R180CM8 - MOSFET (Infineon)
IPD60R180CM8 MOSFET 600V CoolMOSª CM8 Power Transistor The CoolMOS™ 8th generation platform is a revolutionary technology for high voltage power MOSF.

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 600V 3.2A TO252-3
DigiKey
IPD60R1K4C6
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts