* Ultra-fast body diode
* Low gate charge
* Best-in-class reverse recovery charge (Qrr)
* Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
* Lowest FOM RDS(on)
* Qg and RDS(on)
* Eoss
* Best-in-class RDS(on) in SMD and THD packages Benefit
IPD60R170CFD7 Datasheet (1.00 MB)
IPD60R170CFD7
1.00 MB
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