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IPI60R165CP

N-Channel MOSFET

IPI60R165CP Features

* Static drain-source on-resistance: RDS(on) ≤0.165Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Ultra low gate charge

* High peak current capability

IPI60R165CP General Description


* Ultra low gate charge
* High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 61 PD Total Dissipation @TC=25℃ 192 .

IPI60R165CP Datasheet (282.19 KB)

Preview of IPI60R165CP PDF

Datasheet Details

Part number:

IPI60R165CP

Manufacturer:

INCHANGE

File Size:

282.19 KB

Description:

N-channel mosfet.

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TAGS

IPI60R165CP N-Channel MOSFET INCHANGE

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