INCHANGE manufacturer logo and representative part image Part number: IPI60R380C6 Manufacturer: INCHANGE File Size: 260.43kb Download: 📄 Datasheet Description: N-channel mosfet.
IPI60R380C6 - MOSFET (Infineon Technologies) MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.4 Final Powe.
IPI60R385CP - Power Transistor (Infineon Technologies) CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Q.
IPI60R385CP - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.385Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.
IPI60R099CP - Power-Transistor (Infineon) CoolMOSTM Power Transistor Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Q.
IPI60R099CP - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.
IPI60R099CPA - Power Transistor (Infineon Technologies) CoolMOSTM Power Transistor Features • Worldwide best Rds,on in TO262 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Au.
IPI60R125CP - CoolMOS Power Transistor (Infineon Technologies) .. IPI60R125CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated •.
IPI60R125CP - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.125Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.
IPI60R165CP - Power Transistor (Infineon Technologies) IPI60R165CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current cap.
IPI60R165CP - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.165Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.
