IPI60R280C6 - N-Channel MOSFET

INCHANGE

IPI60R280C6 Datasheet Preview — Preview of IPI60R280C6 PDF

Datasheet Details

Part number	IPI60R280C6
Manufacturer	INCHANGE
File Size	282.34 KB
Description	N-Channel MOSFET
Datasheet	IPI60R280C6-INCHANGE.pdf

IPI60R280C6 Product details

Description

Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 13.8 A IDM Drain Current-Single Pulsed 40 A PD Total Dissipation @TC=25℃ 104 W Tj Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX

Features

Static drain-source on-resistance: RDS(on) ≤0.28Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 28, 2020 |