IPI60R299CP Datasheet - INCHANGE

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IPI60R299CP N-Channel MOSFET

isc N-Channel MOSFET Transistor *.
Ultra low gate charge. High peak current capability. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sourc.

IPI60R299CP-INCHANGE.pdf

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Datasheet Details

Part number:

IPI60R299CP

Manufacturer:

INCHANGE

File Size:

282.50 KB

Description:

N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤0.299Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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IPI60R299CP N-Channel MOSFET INCHANGE

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