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IPI60R299CP

N-Channel MOSFET

IPI60R299CP Features

* Static drain-source on-resistance: RDS(on) ≤0.299Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Ultra low gate charge

* High peak current capability

IPI60R299CP General Description


*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pulsed 34 A PD Total Dissipati.

IPI60R299CP Datasheet (282.50 KB)

Preview of IPI60R299CP PDF

Datasheet Details

Part number:

IPI60R299CP

Manufacturer:

INCHANGE

File Size:

282.50 KB

Description:

N-channel mosfet.

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IPI60R299CP N-Channel MOSFET INCHANGE

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