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IPP60R600P7

N-Channel MOSFET

IPP60R600P7 Features

* Static drain-source on-resistance: RDS(on) ≤0.6Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Combines the benefits of a fast switching SJ MOSFET with exc

IPP60R600P7 General Description


*Combines the benefits of a fast switching SJ MOSFET with excellent ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 16 PD Total Dissi.

IPP60R600P7 Datasheet (240.72 KB)

Preview of IPP60R600P7 PDF

Datasheet Details

Part number:

IPP60R600P7

Manufacturer:

INCHANGE

File Size:

240.72 KB

Description:

N-channel mosfet.

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IPP60R600P7 N-Channel MOSFET INCHANGE

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