* Increased MOSFET dv/dt ruggedness
* Extremely low losses due to very low FOM Rdson
* Qg and Eoss
* Very high commutation ruggedness
* Easy to use/drive
* Pb-free plating, Halogen free mold compound
* Qualified for industrial grade applications acco
IPP60R600P6 Datasheet (2.34 MB)
IPP60R600P6
2.34 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor IPx60R600P6
Data Sheet
Rev. 2.2 Final
Power Man.
📁 Related Datasheet
IPP60R600P6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R600P6，IIPP60R600P6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi.
IPP60R600P7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R600P7，IIPP60R600P7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi.
IPP60R600P7 - MOSFET
(Infineon)
IPP60R600P7
MOSFET
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.
IPP60R600C6 - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C6 600V
600V CoolMOS™ C6 Power Transistor IPx60R600C6
Data Sheet
Rev. 2.6 Final
Powe.
IPP60R600C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R600C6，IIPP60R600C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi.
IPP60R600CP - Power Transistor
(Infineon Technologies)
9??-'@-''4?
4VVS=>AB= # : A 0<& < ,9 = 4 = > :<
7LHZ[XLY V )DL: H I; >
IPP60R600CP - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R600CP，IIPP60R600CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi.
IPP60R600E6 - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ E6 600V
600V CoolMOS™ E6 Power Transistor IPx60R600E6
Data Sheet
Rev. 2.2 Final
Powe.
