IPP60R099C6 Datasheet, Mosfet, Infineon Technologies

PDF File Details

Part number:

IPP60R099C6

Manufacturer:

Infineon ↗ Technologies

File Size:

1.19MB

Download:

📄 Datasheet

Description:

Mosfet.

Datasheet Preview: IPP60R099C6 📥 Download PDF (1.19MB)
Page 2 of IPP60R099C6 Page 3 of IPP60R099C6

TAGS

IPP60R099C6
MOSFET
Infineon Technologies

📁 Related Datasheet

IPP60R099C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R099C6,IIPP60R099C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.

IPP60R099C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPP60R099C7 Data Sheet Rev. 2.0 Final Power Man.

IPP60R099C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R099C7,IIPP60R099C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.

IPP60R099CP - Power Transistor (Infineon Technologies)
IPP60R099CP CoolMOSTM Power Transistor Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current c.

IPP60R099CP - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R099CP,IIPP60R099CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.

IPP60R099CPA - Power Transistor (Infineon Technologies)
IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω nC Features • Worldwide best R ds,on in TO220 • .

IPP60R099P6 - P6 Power Transistor (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Man.

IPP60R099P6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R099P6,IIPP60R099P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.

IPP60R099P7 - MOSFET (Infineon)
IPP60R099P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.

IPP60R099P7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R099P7,IIPP60R099P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 600V 37.9A TO220-3
DigiKey
IPP60R099C6XKSA1
848 In Stock
Qty : 500 units
Unit Price : $2.73
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts