* Increased MOSFET dv/dt ruggedness
* Extremely low losses due to very low FOM Rdson
* Qg and Eoss
* Very high commutation ruggedness
* Easy to use/drive
* Pb-free plating, Halogen free mold compound
* Qualified for industrial grade applications acco
IPP60R099P6 Datasheet (2.22 MB)
IPP60R099P6
Infineon ↗ Technologies
2.22 MB
P6 power transistor.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor IPx60R099P6
Data Sheet
Rev. 2.1 Final
Power Man.
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IPP60R099P6 - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
IPP60R099P6，IIPP60R099P6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.
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IPP60R099P7
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isc N-Channel MOSFET Transistor
IPP60R099P7，IIPP60R099P7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.
IPP60R099C6 - MOSFET
(Infineon Technologies)
FGK@?L
FTcP[ GgXST KT\XR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a
=^^[FGKm =6
6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J099=6
>PcP KWTTc
Rev. 2.3 @X]P[
H^fTa FP].
IPP60R099C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R099C6，IIPP60R099C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.
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CoolMOS™ C7
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IPP60R099C7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R099C7，IIPP60R099C7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.
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(Infineon Technologies)
IPP60R099CP
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Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current c.
