Part number:
IPP60R099CP
Manufacturer:
Infineon ↗ Technologies
File Size:
341.06 KB
Description:
Power transistor.
* Worldwide best R ds,on in TO220
* Ultra low gate charge
* Extreme dv/dt rated
* High peak current capability
* Qualified according to JEDEC1) for target applications
* Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q
IPP60R099CP Datasheet (341.06 KB)
IPP60R099CP
Infineon ↗ Technologies
341.06 KB
Power transistor.
📁 Related Datasheet
IPP60R099C6 - MOSFET
(Infineon Technologies)
FGK@?L
FTcP[ GgXST KT\XR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a
=^^[FGKm =6
6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J099=6
>PcP KWTTc
Rev. 2.3 @X]P[
H^fTa FP].
IPP60R099C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R099C6,IIPP60R099C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.
IPP60R099C7 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
600V CoolMOS™ C7 Power Transistor IPP60R099C7
Data Sheet
Rev. 2.0 Final
Power Man.
IPP60R099C7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R099C7,IIPP60R099C7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.
IPP60R099CP - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R099CP,IIPP60R099CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.
IPP60R099CPA - Power Transistor
(Infineon Technologies)
IPP60R099CPA
CoolMOSTM Power Transistor
Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω nC
Features • Worldwide best R ds,on in TO220 • .
IPP60R099P6 - P6 Power Transistor
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor IPx60R099P6
Data Sheet
Rev. 2.1 Final
Power Man.
IPP60R099P6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R099P6,IIPP60R099P6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.