IPP60R099CP Datasheet, Transistor, Infineon Technologies

IPP60R099CP Features

• Transistor
• Worldwide best R ds,on in TO220
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) f

PDF File Details

Part number:

IPP60R099CP

Manufacturer:

Infineon ↗ Technologies

File Size:

341.06kb

Download:

📄 Datasheet

Description:

Power transistor.

IPP60R099CP Application

• Applications
• Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V Ω nC PG-TO220 CoolM

TAGS

IPP60R099CP

Infineon Technologies

📁 Related Datasheet

IPP60R099C6 - MOSFET (Infineon Technologies)
FGK@?L FTcP[ GgXST KT\XR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a =^^[FGKm =6 6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J099=6 >PcP KWTTc Rev. 2.3 @X]P[ H^fTa FP].

IPP60R099C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R099C6，IIPP60R099C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.

IPP60R099C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPP60R099C7 Data Sheet Rev. 2.0 Final Power Man.

IPP60R099C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R099C7，IIPP60R099C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.

IPP60R099CP - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R099CP，IIPP60R099CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.

IPP60R099CPA - Power Transistor (Infineon Technologies)
IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω nC Features • Worldwide best R ds,on in TO220 • .

IPP60R099P6 - P6 Power Transistor (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Man.

IPP60R099P6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R099P6，IIPP60R099P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.

IPP60R099P7 - MOSFET (Infineon)
IPP60R099P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.

IPP60R099P7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R099P7，IIPP60R099P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc.