* Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
* Significant reduction of switching and conduction losses
* Excellent ESD robustness >2kV (HBM) for all products
* Better RDS(on)/package products compared to competit
IPP60R099P7 Datasheet (1.66 MB)
IPP60R099P7
1.66 MB
Mosfet.
IPP60R099P7
MOSFET
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.
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FGK@?L
FTcP[ GgXST KT\XR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a
=^^[FGKm =6
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>PcP KWTTc
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Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current c.
