IPW60R120C7 - N-Channel MOSFET
IPW60R120C7 Features
* Static drain-source on-resistance: RDS(on)≤120mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Suitable for hard and soft switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P
