IPW60R180C7 Datasheet - Infineon Technologies

IPW60R180C7, MOSFET

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPW60R180C7 Data Sheet Rev.
2.0 Final Power Man

Features

* Suitable for hard and soft switching (PFC and high performance LLC)
* Increased MOSFET dv/dt ruggedness to 120V/ns
* Increased efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Qualified for industrial

Applications

* according to JEDEC (J-STD20 and JESD22) Benefits
* Increased economies of scale by use in PFC and PWM topologies in the application
* Higher dv/dt limit enables faster switching leading to higher efficiency
* Enabling higher system efficiency by lower switching losses

IPW60R180C7-InfineonTechnologies.pdf