IPW60R125CP - N-Channel MOSFET
IPW60R125CP Features
* Static drain-source on-resistance: RDS(on)≤125mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High peak current capability
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
