IPW60R165CP Datasheet - INCHANGE

IPW60R165CP, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* Static drain-source on-resistance: RDS(on)≤165mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High peak current capability
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

Applications

* of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IPW60R165CP-INCHANGE.pdf