IPW60R190E6 - N-Channel MOSFET
IPW60R190E6 Features
* Static drain-source on-resistance: RDS(on)≤190mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS
