IPW90R500C3 - N-Channel MOSFET
IPW90R500C3 Features
* Static drain-source on-resistance: RDS(on)≤500mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High peak current capability
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
