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IPW50R350CP N-Channel MOSFET

IPW50R350CP Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R350CP IIPW50R350CP *.

IPW50R350CP Features

* Static drain-source on-resistance: RDS(on)≤350mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Peak Current Capability
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

IPW50R350CP Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IPW50R350CP
Manufacturer
INCHANGE
File Size
238.92 KB
Datasheet
IPW50R350CP-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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