IRF5210 Datasheet - INCHANGE

IRF5210, P-Channel MOSFET

isc P-Channel MOSFET Transistor INCHANGE Semiconductor IRF5210,IIRF5210 *

Features

* Static drain-source on-resistance: RDS(on)≤0.06Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -40 IDM Drain Current-Single Pulsed -140 PD Total Dissipation @TC=25℃ 200 Tj Max.
Operating Junction Temperature 175 Tstg Stora

IRF5210-INCHANGE.pdf