IRF5210 - P-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	IRF5210
Manufacturer	INCHANGE
File Size	274.86 KB
Description	P-Channel MOSFET
Datasheet	IRF5210 Datasheet
Additional preview pages of the IRF5210 datasheet.

Product details

Description

Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -40 IDM Drain Current-Single Pulsed -140 PD Total Dissipation @TC=25℃ 200 Tj Max.Operating Junction Temperature 175 Tstg Storage Temperature -

Features

Static drain-source on-resistance: RDS(on)≤0.06Ω.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 12, 2020 |