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IRF540N - N-Channel MOSFET

IRF540N Description

isc N-Channel MOSFET Transistor *.

IRF540N Features

* Static drain-source on-resistance: RDS(on) ≤0.044Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF540N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 33 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 130 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRF540N
Manufacturer
INCHANGE
File Size
240.38 KB
Datasheet
IRF540N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF540N-like datasheet

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