IRFB4310Z Datasheet - INCHANGE

IRFB4310Z, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4310Z， IIRFB4310Z *.

Features

* Static drain-source on-resistance: RDS(on) ≤6.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 560 PD Total Dissipation @TC=25℃ 250 Tj Max. Operating Junction Temperature 175 Tstg Storage

IRFB4310Z-INCHANGE.pdf