IRFB4019PBF Datasheet - International Rectifier

IRFB4019PBF DIGITAL AUDIO MOSFET

Gate Drain Source This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance a.

IRFB4019PBF Features

* Key Parameters Optimized for Class-D Audio Amplifier Applications

* Low RDSON for Improved Efficiency

* Low QG and QSW for Better THD and Improved Efficiency

* Low QRR for Better THD and Lower EMI

* 175°C Operating Junction Temperature for Ruggedness

IRFB4019PBF Datasheet (304.55 KB)