IRFB4110 Datasheet - Inchange Semiconductor

IRFB4110, N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 *.

Features

* Static drain-source on-resistance: RDS(on) ≤4.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 180 IDM Drain Current-Single Pulsed 670 PD Total Dissipation @TC=25℃ 370 Tj Max. Operating Junction Temperature 175 Tstg Storage

IRFB4110-InchangeSemiconductor.pdf