IRFB4110QPBF Datasheet - International Rectifier

IRFB4110QPBF HEXFET Power MOSFET

PD - 96138 www.DataSheet4U.com IRFB4110QPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l 175°C Operating Temperature l Automotive [Q101] Qualified HEXFET® Power MOSFET VDSS RDS(on) typ. max ID .

IRFB4110QPBF Features

* 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Fi

IRFB4110QPBF Datasheet (330.83 KB)