* 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Fi
IRFB4110QPBF Datasheet (330.83 KB)
IRFB4110QPBF
International Rectifier
330.83 KB
Hexfet power mosfet.
PD - 96138
www.DataSheet4U.com
IRFB4110QPbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Sp.
📁 Related Datasheet
IRFB4110 N-Channel MOSFET Transistor (Inchange Semiconductor)
IRFB4110 HEXFET Power MOSFET (International Rectifier)
IRFB4110G N-Channel MOSFET (INCHANGE)
IRFB4110GPbF Power MOSFET (International Rectifier)
IRFB4110PBF HEXFET Power MOSFET (International Rectifier)
IRFB4115 Power MOSFET (International Rectifier)
IRFB4115 N-Channel MOSFET (INCHANGE)
IRFB4115G N-Channel MOSFET (INCHANGE)
IRFB4115GPbF Power MOSFET (International Rectifier)
IRFB4115PBF Power MOSFET (International Rectifier)
