IRFB4115G Datasheet - INCHANGE

IRFB4115G, N-Channel MOSFET

isc N-Channel MOSFET Transistor IRFB4115G，IIRFB4115G *.

Features

* Static drain-source on-resistance: RDS(on) ≤11mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Efficiency Synchronous Rectification in SMPS
* Uninte

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IRFB4115G-INCHANGE.pdf