Datasheet Details
| Part number | IRFBC30 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 54.55 KB |
| Description | TO-220C N-Channel MOSFET Transistor |
| Datasheet |
 IRFBC30 Datasheet
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| Part number | IRFBC30 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 54.55 KB |
| Description | TO-220C N-Channel MOSFET Transistor |
| Datasheet |
IRFBC30 Datasheet
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·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±20 V V ID Drain Current-Continuous 3.6 A IDM Drain Current-Single Pluse 14 A PD Total Dissipation @TC=25℃ 75 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX UNIT 1.7 ℃/W 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC30 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRFBC30 | N-Channel Power MOSFET | STMicroelectronics |
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IRFBC30 | Power MOSFET | International Rectifier |
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IRFBC30 | Power MOSFET | Vishay |
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IRFBC30 | TO-220 N-Channel MOSFET | INCHANGE |
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IRFBC30A | Power MOSFET | International Rectifier |
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