IRFBC30AS Description
l Single transistor Flyback Notes through are on page 10 .irf. 1 5/4/00 IRFBC30AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 600 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRFBC30AS Key Features
- Uninterruptable Power Supply
- High speed power switching
- VDSS 600V Rds(on) max 2.2 Ω ID 3.6A Benefits Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss specified (See AN 1001)
- D 2 Pak T O -26 2