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IRFBC30A - Power MOSFET

Key Features

  • Low Gate Charge Qg Results in Simple Drive Requirement Available.
  • Improved Gate, Avalanche and Dynamic dV/dt RoHS.
  • Ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.2 23 5.