IRFBC30APBF Description
SMPS MOSFET PD - 95700 IRFBC30APbF HEXFET® Power MOSFET .. l Single transistor Flyback Notes through are on page 8 .irf. 1 9/10/04 IRFBC30APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRFBC30APBF Key Features
- Uninterruptable Power Supply
- High speed power switching
- Lead-Free
- VDSS 600V Rds(on) max 2.2Ω ID 3.6A Benefits Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss specified (See AN 1001)
- TO-220AB G DS