IRFBC30A Overview
l Single transistor Flyback Notes through are on page 8 .irf. 1 5/4/00 IRFBC30A Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage...
IRFBC30A Key Features
- Uninterruptable Power Supply
- High speed power switching
- VDSS 600V Rds(on) max 2.2Ω ID 3.6A Benefits Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss specified (See AN 1001)
- TO-220AB G DS
