Datasheet Details
| Part number | IRFBC30S |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 362.06 KB |
| Description | Power MOSFET |
| Datasheet | IRFBC30S_InternationalRectifier.pdf |
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Overview: PD - 9.1015 PRELIMINARY l l l l l l l IRFBC30S/L HEXFET® Power MOSFET D Surface Mount (IRFBC30S) Low-profile through-hole (IRFBC30L) Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 600V RDS(on) = 2.2Ω G ID = 3.
| Part number | IRFBC30S |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 362.06 KB |
| Description | Power MOSFET |
| Datasheet | IRFBC30S_InternationalRectifier.pdf |
|
|
|
Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFBC30S | Power MOSFET | Vishay |
 |
IRFBC30 | TO-220C N-Channel MOSFET Transistor | Inchange Semiconductor |
 |
IRFBC30 | N-Channel Power MOSFET | STMicroelectronics |
|
IRFBC30 | Power MOSFET | Vishay |
 |
IRFBC30 | TO-220 N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| IRFBC30 | Power MOSFET |
| IRFBC30A | Power MOSFET |
| IRFBC30APBF | Power MOSFET |
| IRFBC30AS | Power MOSFET |
| IRFBC30L | Power MOSFET |
| IRFBC20 | Power MOSFET |
| IRFBC20L | Power MOSFET |
| IRFBC20S | Power MOSFET |
| IRFBC40 | Power MOSFET |
| IRFBC40A | Power MOSFET |