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IRFBC30S - Power MOSFET

General Description

Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFBC30 Power MOSFET
IRFBC30A Power MOSFET
IRFBC30APBF Power MOSFET
IRFBC30AS Power MOSFET
IRFBC30L Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 9.1015 PRELIMINARY l l l l l l l IRFBC30S/L HEXFET® Power MOSFET D Surface Mount (IRFBC30S) Low-profile through-hole (IRFBC30L) Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 600V RDS(on) = 2.2Ω G ID = 3.6A S Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.