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IRFBC30S - Power MOSFET

General Description

Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.

See device orientation.

Key Features

  • 600 2.2.
  • Halogen-free According to IEC 61249-2-21 Definition.
  • Surface Mount (IRFBC30S, SiHFBC30S).
  • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L).
  • Available in Tape and Reel (IRFBC30S, SiHFBC30S).
  • Dynamic dV/dt Rating.
  • 150 °C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination o.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 17 Single D FEATURES 600 2.2 • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.