| Part Number | IRFBC30S Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is. m Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single . |
IRFBC30S Datasheet and Specifications PDF
The IRFBC30S is a Power MOSFET.
| Part Number | IRFBC30S Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
G G D S
G D S S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHFBC30S-GE3 IRFBC30SPbF SiHFBC30S-E3
A.
600 2.2
* Halogen-free According to IEC 61249-2-21 Definition * Surface Mount (IRFBC30S, SiHFBC30S) * Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) * Available in Tape and Reel (IRFBC30S, SiHFBC30S) * Dynamic dV/dt Rating * 150 °C Operating Temperature * Fast Switching * Fully Avalanche Rated * Co. |