Datasheet Details
| Part number | IRFBC30 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 85.59 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | IRFBC30_STMicroelectronics.pdf |
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Overview: ® IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ™ ΙΙ MOSFET TYPE IRFBC30 s s s s s V DSS 600 V R DS(on) < 2.2 Ω ID 3.6 A TYPICAL RDS(on) = 1.
| Part number | IRFBC30 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 85.59 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | IRFBC30_STMicroelectronics.pdf |
|
|
|
The PowerMESH™ ΙΙ is the evolution of the first generation of MESH OVERLAY™ .
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRFBC30 | TO-220C N-Channel MOSFET Transistor | Inchange Semiconductor |
 |
IRFBC30 | Power MOSFET | International Rectifier |
 |
IRFBC30 | Power MOSFET | Vishay |
 |
IRFBC30 | TO-220 N-Channel MOSFET | INCHANGE |
|
IRFBC30A | Power MOSFET | International Rectifier |
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