IRFU5305 Datasheet - INCHANGE

IRFU5305, P-Channel MOSFET

isc P-Channel MOSFET Transistor *

Features

* Static drain-source on-resistance: RDS(on)≤65mΩ(@VGS= -10V; ID= -16A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Fast switching application.

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -31 A PD Total Dissipation @TC=25℃ 110 W Tj Max.
Operating Temperature Junction -55~1

IRFU5305-INCHANGE.pdf