IRL7833S Datasheet - INCHANGE

IRL7833S, N-Channel MOSFET

isc N-Channel MOSFET Transistor IRL7833S *DESCRIPTION *Static drain-source on-resistance: RDS(on) ≤3.8mΩ@VGS= 10V *100% avalanche tested

Applications

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* Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 150 A

IRL7833S-INCHANGE.pdf