Part number:
IRL1004
Manufacturer:
INCHANGE
File Size:
241.52 KB
Description:
N-channel mosfet.
* Static drain-source on-resistance: RDS(on) ≤6.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* reliable device for use in a wide variety of applications
IRL1004
INCHANGE
241.52 KB
N-channel mosfet.
📁 Related Datasheet
IRL1004 - HEXFET Power MOSFET
(International Rectifier)
..
PD - 91702B
IRL1004
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic .
IRL1004L - Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Swit.
IRL1004LPBF - Power MOSFET
(International Rectifier)
..
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating.
IRL1004PBF - Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.
IRL1004S - Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Swit.
IRL1004S - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IRL1004SPBF - Power MOSFET
(International Rectifier)
..
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating.
IRL100HS121 - MOSFET
(Infineon)
IRL100HS121
Target Applications
Wireless charging Adapter Tele
Benefits
Higher power density designs Higher switching frequency Uses O.
