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IRL1004PBF

Power MOSFET

IRL1004PBF Features

* 69 (.185) 4.20 (.165) -B- 1.32 (.052) 1.22 (.048) LEAD ASSIGNMENTS HELXEFAE1DT-AGSASTIGENMEINGTBSTs, CoPACK 1- GAT2E- DRAIN 1- GATE 2- DRA3IN- SOURCE 2- COLLECTOR 3- SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.0

IRL1004PBF General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr.

IRL1004PBF Datasheet (156.09 KB)

Preview of IRL1004PBF PDF

Datasheet Details

Part number:

IRL1004PBF

Manufacturer:

International Rectifier

File Size:

156.09 KB

Description:

Power mosfet.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.

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IRL1004PBF Power MOSFET International Rectifier

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