IRL1004PBF Datasheet - International Rectifier

IRL1004PBF, Power MOSFET

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistanc.

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IRL1004PBF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRL1004PBF

Manufacturer:

International Rectifier

File Size:

156.09 KB

Description:

Power MOSFET

Features

* 69 (.185) 4.20 (.165) -B- 1.32 (.052) 1.22 (.048) LEAD ASSIGNMENTS HELXEFAE1DT-AGSASTIGENMEINGTBSTs, CoPACK 1- GAT2E- DRAIN 1- GATE 2- DRA3IN- SOURCE 2- COLLECTOR 3- SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.0

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC =

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IRL1004PBF Power MOSFET International Rectifier

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