IRL2203NL Datasheet (FreesCale)

IRL2203NL, Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the desi

IRL2203NL Features

* ay Inductance

* Ground Plane

* Low Leakage Inductance Current Transformer -

* + RG VGS

* dv/dt controlled by RG

* ISD controlled by Duty Factor "D"

* D.U.T. - Device Under Test + VDD

* Reverse Polarity of D.U.T for P-Channel http://www.D