Datasheet Details
- Part number
- IRL2505
- Manufacturer
- International Rectifier
- File Size
- 106.69 KB
- Datasheet
- IRL2505_InternationalRectifier.pdf
- Description
- Power MOSFET
IRL2505 Description
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRL2505 Features
* RC E 4 - DRAIN
3X
1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
2.54 (.100)
3X
0.93 (.037) 0.69 (.027)
0 .3 6 (.01 4) M B A M
3X
0.55 (.022) 0.46 (.018)
2.92 (.115) 2.64 (.104)
N OTES:
2X
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N
IRL2505 Applications
* The TO-220 is universally preferred for all commercialIndustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
ID @ TC = 25°C ID
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