IRL2505 Datasheet - International Rectifier

IRL2505, Power MOSFET

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRL2505_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRL2505

Manufacturer:

International Rectifier

File Size:

106.69 KB

Description:

Power MOSFET

Features

* RC E 4 - DRAIN 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0 .3 6 (.01 4) M B A M 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) N OTES: 2X 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N

Applications

* The TO-220 is universally preferred for all commercialIndustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC = 25°C ID

IRL2505 Distributors

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IRL2505 Power MOSFET International Rectifier

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