IRL2505 Datasheet (International Rectifier)

IRL2505, Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

IRL2505 Features

* RC E 4 - DRAIN 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0 .3 6 (.01 4) M B A M 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) N OTES: 2X 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N