IRL2505L Datasheet (International Rectifier)

IRL2505L, Power MOSFET

l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.008Ω G ID = 104A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device de

IRL2505L Features

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRL2505S/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80