IRL2910L Datasheet, Mosfet, INCHANGE

IRL2910L Features

• Mosfet
• With To-263(D2PAK) package
• Low input capacitance and gate charge
• Low gate input resistance
• 100% avalanche tested
• Minimum Lot-to-Lot variatio

PDF File Details

Part number:

IRL2910L

Manufacturer:

INCHANGE

File Size:

252.07kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IRL2910L Application

• Applications
• Switching applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage

TAGS

IRL2910L

INCHANGE

📁 Related Datasheet

IRL2910 - HEXFET Power MOSFET (International Rectifier)
PD - 91375B IRL2910 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C .

IRL2910 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.026Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.

IRL2910L - Power MOSFET (International Rectifier)
l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching G l Fu.

IRL2910LPbF - HEXFET Power MOSFET (International Rectifier)
PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fa.

IRL2910PBF - Power MOSFET (International Rectifier)
• Lead-Free PD - 94993 IRL2910PbF .irf. 1 2/10/04 IRL2910PbF 2 .irf. IRL2910PbF .irf. 3 IRL2910PbF 4 .irf. IRL2910PbF.

IRL2910S - Power MOSFET (International Rectifier)
l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching G l Fu.

IRL2910S - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IRL2910S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.

IRL2910SPbF - HEXFET Power MOSFET (International Rectifier)
PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fa.

IRL2203N - Power MOSFET (International Rectifier)
PD - 91366 IRL2203N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temper.

IRL2203N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL2203N，IIRL2203N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement .