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IRL2910 Datasheet - International Rectifier

IRL2910, HEXFET Power MOSFET

PD - 91375B IRL2910 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C .
l l D VDSS = 100V RDS(on) = 0.
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IRL2910_InternationalRectifier.pdf

Preview of IRL2910 PDF

Datasheet Details

Part number:

IRL2910

Manufacturer:

International Rectifier

File Size:

124.56 KB

Description:

HEXFET Power MOSFET

Features

* S 1 - G AT E 2 - D RA IN 3 - S OU R C E 4 - D RA IN 14 .09 (.55 5) 13 .47 (.53 0) 4 .06 (.16 0) 3 .55 (.14 0) 3X 3X 1 .40 (.05 5) 1 .15 (.04 5) 0.93 (.037 ) 0.69 (.027 ) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0.36 (.01 4) 2 .54 (.10 0) 2X N O TE S: 1 D IM EN S IO N ING & TOL ER A NC IN G P ER

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

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