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IRL2910

HEXFET Power MOSFET

IRL2910 Features

* S 1 - G AT E 2 - D RA IN 3 - S OU R C E 4 - D RA IN 14 .09 (.55 5) 13 .47 (.53 0) 4 .06 (.16 0) 3 .55 (.14 0) 3X 3X 1 .40 (.05 5) 1 .15 (.04 5) 0.93 (.037 ) 0.69 (.027 ) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0.36 (.01 4) 2 .54 (.10 0) 2X N O TE S: 1 D IM EN S IO N ING & TOL ER A NC IN G P ER

IRL2910 General Description

l l D VDSS = 100V RDS(on) = 0.026Ω G ID = 55A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow.

IRL2910 Datasheet (124.56 KB)

Preview of IRL2910 PDF

Datasheet Details

Part number:

IRL2910

Manufacturer:

International Rectifier

File Size:

124.56 KB

Description:

Hexfet power mosfet.
PD - 91375B IRL2910 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C .

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IRL2910 HEXFET Power MOSFET International Rectifier

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