Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- L INE "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree"
OR
IN T E R N AT ION AL R E CT IF IE R L OGO
AS S E MB L Y L OT COD E
F 530S
P AR T NU MB E R
D AT E COD E YE AR 0 = 2 000 WEEK 02 LINE L
INT E R NAT IONAL R E CT IF IE R L OGO
AS S E MB L Y L OT CODE
F 530S
P AR T N U MB E R
DAT E CODE P = DE S IGN AT E S L E AD-F R E E
P R ODU CT (OPT IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E CODE
TO-262 Package Outline
IRL2910S/LPbF
TO-262 Part Marking Informa.