IRL2910S

Power MOSFET

International Rectifier

IRL2910S General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRL2910S Datasheet (335.23 KB)

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IRL2910S

Manufacturer:

International Rectifier

File Size:

335.23 KB

Description:

Power mosfet.
l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching G l Fu.

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IRL2910S Power MOSFET International Rectifier

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IRL2910S General Description

Datasheet Details

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