IRL2910S
International Rectifier
335.23kb
Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc
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IRL2910 - HEXFET Power MOSFET
(International Rectifier)
PD - 91375B
IRL2910
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C .
IRL2910 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.026Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.
IRL2910L - Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
G
l Fu.
IRL2910L - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanc.
IRL2910LPbF - HEXFET Power MOSFET
(International Rectifier)
PD - 95149
IRL2910S/LPbF
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fa.
IRL2910PBF - Power MOSFET
(International Rectifier)
• Lead-Free
PD - 94993
IRL2910PbF
.irf.
1 2/10/04
IRL2910PbF
2 .irf.
IRL2910PbF
.irf.
3
IRL2910PbF
4 .irf.
IRL2910PbF.
IRL2910S - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IRL2910S
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.
IRL2910SPbF - HEXFET Power MOSFET
(International Rectifier)
PD - 95149
IRL2910S/LPbF
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fa.
IRL2203N - Power MOSFET
(International Rectifier)
PD - 91366
IRL2203N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temper.
IRL2203N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRL2203N,IIRL2203N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤7.0mΩ ·Enhancement .