Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des
IRL2910S-InternationalRectifier.pdf
Datasheet Details
IRL2910L, IRL2910S
International Rectifier
335.23 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: IRL2910L, IRL2910S.
Please refer to the document for exact specifications by model.
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