IRL2203NSPbF Datasheet - International Rectifier

IRL2203NSPbF Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the desi.

IRL2203NSPbF Features

* form Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www.irf.com

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL2203NS/LPbF D2Pak (TO-263AB) Package Outline Dimensions

IRL2203NSPbF-InternationalRectifier.pdf