Part number:
IRL2203NSPbF
Manufacturer:
International Rectifier
File Size:
287.10 KB
Description:
Power mosfet.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the desi
IRL2203NSPbF Features
* form Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www.irf.com
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL2203NS/LPbF D2Pak (TO-263AB) Package Outline Dimensions
IRL2203NSPbF-InternationalRectifier.pdf
Datasheet Details
IRL2203NSPbF
International Rectifier
287.10 KB
Power mosfet.
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